low - noise, matched dual monolithic transistor MAT02 1.0 scope this specification documents the detail requirements for space qualified product manufactured on analog devices, inc.'s qml certified line per mil - prf - 38535 level v except as modified herein. the manufacturing flow described in the standard spa ce level products program brochure is to be considered a part of this specification http://www.analog.com/aerospace this data sheet specifically details the space grade version of this product. a more de tailed operational description and a complete datasheet for commercial product grades can be found at www.analog.com/MAT02 2.0 part number . the complete part number(s) of this specification follow: part number des cription MAT02 - 903h low - noise, matched dual monolithic transistor 2.1 case outline . letter descriptive designator case outline (lead finish per mil - prf - 38535) h macy1 - x6 6 - lead can package (to) figure 1 - terminal connections . 3.0 absolute maximum ratings . ( t a = 25c, unless otherwise noted) col l ector to base voltage (bv cbo ) ................................ ................................ .................. 40v collector to emitter voltage (bv ceo ) ................................ ................................ .............. 40v collector to collector voltage (bv cc ) ................................ ................................ ............. 40v emitter to emitter voltage (bv ee ) ................................ ................................ ................... 40v collector current (i c ) ................................ ................................ ................................ .... 20ma emitter current (i e ) ................................ ................................ ................................ ....... 20ma t otal power dissipation 1/ ................................ ................................ ........................ 500mw operating ambient temperature range ................................ ............................. - 55 to +125c storage temperature range ................................ ................................ ......... - 65c to +150c lead temperature (soldering, 60 sec) ................................ ................................ ........ +300c dice junc tion temperature ................................ ................................ ......................... +150c 1/ rating applies to applications not using heat sin king, device is free air only.
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MAT02 3.1 thermal characteristics : thermal resistance, to - 78 (h) package junction - to - case ( ? jc ) = 45c/w max junction - to - ambient ( ? ja ) = 150c/w max derate linearly at 6.67 mw/c for ambient temperatures above 70c. terminal connections 1/ terminal 6 lead to 1 c1 2 b1 3 e1 4 e2 5 b2 6 c2 1/ substrate is connected to case on to - 78 package. substrate is normally connected to the most negative circuit potential, but can be floated. table i par ameter see notes at end of table symbol conditions 1/ sub - group limit min limit max units current gain h fe i c = 1ma; v cb = 0v, 40v 1 500 2, 3 275 i c = 100 ? a; v cb = 0v, 40v 1 500 i c = 100 ? a; v cb = 15v 2, 3 225 i c = 10 ? a; v cb = 0v, 40v 1 400 i c = 10 ? a; v cb = 15v 2, 3 175 i c = 1 ? a; v cb = 0v, 40v 1 300 i c = 1 ? a; v cb = 15v 2, 3 150 current gain match 2/ ? h fe i c =10 ? a,100 ? a,1ma; v cb =0v 1 2 % offset voltage v os v cb = 0v 1 50 ? v 2, 3 80 offset voltage vs. temperature 5/ tcv os v cb = 0v 0.3 ? v/c offset voltage vs. v cb 3/ ? v os / ? v cb v cb = 0v, 40v 1 25 ? v offset voltage vs. collector current ? v os / ? i c v cb = 0v; i c = 10 ? a, 1m a 1 25 input offset current i os v cb = 0v, 40v 1 0.6 na 2, 3 9.0 offset current vs. v cb ? i os / ? v cb v cb = 0v, 40v 1 70 pa/v bulk emitter resistance r be 1 0.5 ? ?
MAT02 table i(contd) parameter see notes at end of table symbol conditions 1/ sub - g roup limit min limit max units collector base leakage current i cbo v cb = 40v 1 200 pa collector emitter leakage current 4/ i ces v ce = 40v, v be = 0v 1 200 collector - collector leakage current 4/ i cc v cc = 40v 1 200 bias current i b v cb = 0v, 40 v 1 25 na 2, 3 60 collector saturation voltage v ce sat i c = 1ma, i b = 100 ? a 1 0.1 v breakdown voltage bv ceo i c = 100 ? a 1 40 noise voltage density e n i c =1ma, f o = 10hz 7 2 v cb =0v f o = 100hz 1 f o = 1000hz 1 f o = 10khz 1 table i notes: 1/ v cb = 15v; i c = 10 ? a, unless otherwise spe cified. 2/ current gain match ( ? h fe ) is defined as: 3/ measured at i c = 10 ? a and guaranteed by design over 1 ? a ?? i c ? 1ma. 4/ i cc and i ces are verified by measurement of i cbo . 5/ guaranteed by v os test t = 298k for t a = +25c. hz nv/ c fe b fe h i min ) i ( 100 h ? ? ? ? ? ? ? ? ? ?? ? be os os os v v for t v tcv
MAT02 4.1 electrical test requirements : table ii test requirements subgroups (in accordance with mil - prf - 38535, table iii) interim electrical parameters 1 final electrical parameters 1, 2, 3 1/ 2/ group a test requirements 1, 2, 3 , 7 group c end - point electrical parameters 1 2/ group d end - point electrical parameters 1 group e end - point electrical parameters 1 1/ pda applies to subgroup 1. delta's excluded from pda. 2/ see table iii for delta parameters. see table i for conditions. 4.2 table iii. burn - in test delta limits . table iii test burn - in life test delta title endpoint endpoint limit units h fe @ 1ma 500 420 80 h fe @ 100 ? a 500 410 90 h fe @ 10 ? a 400 300 100 h fe @ 1 ? a 300 180 120 ios 0.6 1.1 0.5 na 5.0 life t est/burn - in circuit: 5.1 htrb is not applicable for this drawing. 5.2 burn - in is per mil - std - 883 method 1015 test condition b. 5.3 steady state life test is per mil - std - 883 method 1005.
MAT02 rev description of change date a initiate aug. 29, 2000 b correc t typo at dice temperature range, change rc package ? jc from 18 to 35c/w, correct typos on table i (subscript), make correction to table i note 3 (change from measured at i c = 10ma and guaranteed by design over 10ma ?? i c ? 1ma to measured at i c = 10 ? a and guaranteed by design over 1 ? a ?? i c ? 1ma), add subgroup 7 for e n , add subgroup 7 to table ii, delete subgroups 4, 5, 6 from table ii. jan. 7, 2002 c update web address. delete burn - in and rad circuits june 20, 2003 d update package offering oct. 10, 2007 e update header/footer & add to 1.0 scope de scription. feb. 25,2008 f r emove operating junction temperature line and change to dice junction temperature (t j ...150c) march 31, 2008 g MAT02 - 913h C removed because its obsolete s ept. 23, 2014
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